Title :
20 GHz high performance planar Si/InGaAs P-I-N photodetector
Author :
Levine, B.F. ; Hawkins, A.R. ; Hiu, S. ; Tseng, B.J. ; King, C.A. ; Gruezke, L.A. ; Johnson, R.W. ; Zolnowski, D.R. ; Bowers, J.E.
Author_Institution :
Bell Labs., Lucent Technol., Murray Hill, NJ, USA
Abstract :
Wafer fused planar Si/InGaAs p-i-n photodetectors were fabricated. They show high internal quantum efficiency (η≈1), high speed (21 GHz), record low dark current (100 pA at 4 V bias), and no evidence of charge trapping, recombination centers or a bandgap discontinuity at the heterointerface
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; p-i-n photodiodes; photodetectors; silicon; 20 GHz; Si-InGaAs; bandgap discontinuity; charge trapping; dark current; heterointerface; high speed device; internal quantum efficiency; recombination center; wafer fused planar Si/InGaAs p-i-n photodetector; Absorption; Dark current; Detectors; Indium gallium arsenide; Indium phosphide; PIN photodiodes; Photodetectors; Substrates; Voltage; Wafer bonding;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600199
