Title :
Properties of AgInS2 films prepared by spray pyrolysis for solar cells
Author :
Ortega-López, Mauricio ; Morales-Acevedo, Arturo ; Solorza-Feria, Omar
Author_Institution :
Dept. of Electr. Eng., Centro de Investigacion y de Estudios Avanzados, IPN, Mexico City, Mexico
Abstract :
The authors have prepared AgInS2 thin films by the spray pyrolysis technique. The effects of the growth temperature and the chemical composition of the solution upon the structural, the optical and the electrical properties of the films have been studied. It was found that growth temperatures above 400°C lead to single-phase chalcopyrite type AgInS2 films, but deposition temperatures lower than 400°C lead to mixed chalcopyrite and orthorombic structure films. All the films grown here show n-type conductivity with room temperature resistivities in the range between 103-10 5 Ω-cm. The absorbance derivative spectra of single phase AgInS2 films revealed two energy gaps around 1.87 eV and 2.03 eV, attributed to the fundamental edge and to the valence band splitting by the crystal-field, respectively
Keywords :
indium compounds; pyrolysis; semiconductor device measurement; semiconductor device testing; semiconductor growth; semiconductor thin films; silver compounds; solar cells; spray coating techniques; spray coatings; 1.87 eV; 1E3 to 1E5 ohmcm; 2.03 eV; AgInS2; AgInS2 thin film solar cells; absorbance derivative spectra; chemical composition; crystal-field; deposition temperature; electrical properties; growth temperature; optical properties; room temperature resistivity; spray pyrolysis technique; structural properties; valence band splitting; Conductivity; Crystalline materials; Crystals; Optical films; Optical materials; Optical mixing; Photovoltaic cells; Semiconductor materials; Spraying; Temperature distribution;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.915920
