Title :
Deposition temperature dependent properties of MOCVD grown polycrystalline CuGaSe2 thin films and solar cells
Author :
Fiedeler, U. ; Bauknecht, A. ; Gerhard, A. ; Albert, J. ; Lux-Steiner, M.Ch. ; Siebentritt, S.
Author_Institution :
Hahn-Meitner-Inst., Berlin, Germany
Abstract :
Metal organic vapour deposition (MOCVD) was employed to deposit polycrystalline CuGaSe2 films and solar cells on glass. Deposition temperature was varied between 570°C and 450°C. Continuous CuGaSe2 films were obtained at a deposition temperature of 450°C. Even at this low deposition temperatures the photoluminescence (PL) of the films is dominated by near band gap emission. Depending on the composition the PL spectra are dominated by different donor acceptor pair transitions. Solar cells are processed from these 400 nm thick films and the compositional dependence of the photovoltaic parameters is discussed, especially the increase of the open circuit voltage up to 821 mV under 100 mW/cm2 AM1.5 with increasing Ga content
Keywords :
MOCVD; MOCVD coatings; copper compounds; energy gap; gallium compounds; photoluminescence; semiconductor device measurement; semiconductor device testing; semiconductor thin films; solar cells; 400 nm; 570 to 450 C; 821 mV; CuGaSe2; MOCVD growth; deposition temperature dependent properties; polycrystalline CuGaSe2 solar cells; polycrystalline CuGaSe2 thin films; Chemical vapor deposition; Glass; MOCVD; Photoluminescence; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Solar power generation; Temperature dependence; Thick films;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.915921
