DocumentCode
3029280
Title
Influence of crystal orientation on device performance of CuInS2 solar cells
Author
Siemer, K. ; Klaer, J. ; Luck, I. ; Bräunig, D.
Author_Institution
Hahn-Meitner-Inst., Berlin, Germany
fYear
2000
fDate
2000
Firstpage
630
Lastpage
633
Abstract
CuInS2 based thin film solar cells are prepared by a rapid thermal process. X-ray diffraction on CuInS2 absorber layers show preferred (112) orientation for certain process parameters. The occurrence of this crystal orientation correlates with superior device performance of corresponding solar cells mainly due to a decreased series resistance. From admittance spectroscopy, these cells show higher absorber conductivity at low temperatures
Keywords
X-ray diffraction; copper compounds; crystal orientation; indium compounds; semiconductor device measurement; semiconductor device testing; solar cells; spectroscopy; ternary semiconductors; CuInS2; CuInS2 absorber layers; CuInS2 solar cells; X-ray diffraction; absorber conductivity; admittance spectroscopy; crystal orientation; device performance; preferred (112) orientation; process parameters; series resistance reduction; Admittance measurement; Conductivity; Etching; Furnaces; Photovoltaic cells; Powders; Rapid thermal processing; Spectroscopy; Temperature; X-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location
Anchorage, AK
ISSN
0160-8371
Print_ISBN
0-7803-5772-8
Type
conf
DOI
10.1109/PVSC.2000.915922
Filename
915922
Link To Document