Title :
Influence of crystal orientation on device performance of CuInS2 solar cells
Author :
Siemer, K. ; Klaer, J. ; Luck, I. ; Bräunig, D.
Author_Institution :
Hahn-Meitner-Inst., Berlin, Germany
Abstract :
CuInS2 based thin film solar cells are prepared by a rapid thermal process. X-ray diffraction on CuInS2 absorber layers show preferred (112) orientation for certain process parameters. The occurrence of this crystal orientation correlates with superior device performance of corresponding solar cells mainly due to a decreased series resistance. From admittance spectroscopy, these cells show higher absorber conductivity at low temperatures
Keywords :
X-ray diffraction; copper compounds; crystal orientation; indium compounds; semiconductor device measurement; semiconductor device testing; solar cells; spectroscopy; ternary semiconductors; CuInS2; CuInS2 absorber layers; CuInS2 solar cells; X-ray diffraction; absorber conductivity; admittance spectroscopy; crystal orientation; device performance; preferred (112) orientation; process parameters; series resistance reduction; Admittance measurement; Conductivity; Etching; Furnaces; Photovoltaic cells; Powders; Rapid thermal processing; Spectroscopy; Temperature; X-ray diffraction;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.915922
