Simulation of gate switching characteristics of a miniaturized MOSFET based on a non-isothermal non-equilibrium transport model

Author

Choi, Won-Cheol ; Kawashima, Hirobumi ; Dang, Ryo

Author_Institution

Coll. of Eng., Hosei Univ., Tokyo, Japan

fYear

1997

fDate

28-31 Jan 1997

Firstpage

345

Lastpage

348

Abstract

Our device simulator is developed for the analysis of a MOSFET based on a thermally coupled energy transport model (TCETM). The simulator has the ability to calculate not only steady-state characteristics but also transient characteristics of a MOSFET. It solves basic semiconductor device equations including the Poisson equation, current continuity equations for electrons and holes, energy balance equation for electrons and heat flow equation, using the finite difference method

Keywords

MOSFET; digital simulation; finite difference methods; semiconductor device models; transient analysis; MOSFET; Poisson equation; current continuity equations; device simulator; electrons; energy balance equation; finite difference method; gate switching simulation; heat flow equation; nonisothermal nonequilibrium transport model; semiconductor device equations; steady-state characteristics; thermally coupled energy transport model; transient characteristics; Charge carrier processes; Difference equations; Educational institutions; Electrons; Lattices; MOSFET circuits; Poisson equations; Steady-state; Temperature; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Design Automation Conference, 1997. Proceedings of the ASP-DAC '97 Asia and South Pacific

Conference_Location

Chiba

Print_ISBN

0-7803-3662-3

Type

conf

DOI

10.1109/ASPDAC.1997.600203

Filename

600203