Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and InAlGaAs/InGaAs/InP quantum wells

Author

Du, Sichao ; Fu, L. ; Tan, H.H. ; Jagadish, C.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT

fYear

2008

fDate

25-29 Feb. 2008

Firstpage

32

Lastpage

35

Abstract

In this work, we studied the proton and arsenic ion implantation-induced intermixing in InGaAsP/InGaAs and InAlGaAs/InGaAs quantum wells. The results were compared and discussed based on the defect formation and evolution process under the different implantation conditions and QW barrier materials.

Keywords

III-V semiconductors; aluminium compounds; chemical interdiffusion; crystal defects; gallium arsenide; indium compounds; ion implantation; semiconductor doping; semiconductor quantum wells; InAlGaAs-InGaAs-InP; InGaAsP-InGaAs-InP; arsenic ion implantation; defect formation; interdiffusion; intermixing; proton implantation; quantum wells; Indium gallium arsenide; Indium phosphide; Ion implantation; Monolithic integrated circuits; Optoelectronic devices; Photoluminescence; Photonic band gap; Protons; Quantum well lasers; Rapid thermal annealing; interdiffusion; ion implantation; photoluminescence; quantum well intermixing;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoscience and Nanotechnology, 2008. ICONN 2008. International Conference on

Conference_Location

Melbourne, Vic.

Print_ISBN

978-1-4244-1503-8

Electronic_ISBN

978-1-4244-1504-5

Type

conf

DOI

10.1109/ICONN.2008.4639238

Filename

4639238