A trapped charge model for the transient effect in CIGS solar cells

Author

Cuiffi, Joseph D. ; Zhu, Hong ; Fonash, Stephen J.

Author_Institution

Facility of Nanofabrication, Pennsylvania State Univ., University Park, PA, USA

fYear

2000

fDate

2000

Firstpage

674

Lastpage

675

Abstract

The authors present a model for the transient effects observed in CIGS based solar cells. By considering charge trapping and de-trapping in the CdS layer of the structure, they provide a mechanism for the observed cyclic performance changes. To complement the physical model, an AMPS computer model of a CIGS device was created and used to show that the effects of trapped charge correspond to the experimentally measured changes. The charge buildup in the CdS region is shown to reduce only the fill factor of devices, and as the computer model shows, this effect may be alleviated with higher n-type doping in the CdS layer

Keywords

copper compounds; electronic engineering computing; gallium compounds; indium compounds; semiconductor device models; software packages; solar cells; trapped ions; AMPS computer model; CdS; CdS layer; Cu(In,Ga)Se₂ solar cells; Cu(InGa)Se₂; charge buildup; charge trapping; cyclic performance changes; de-trapping; fill factor; transient effects; trapped charge model; Buffer layers; Charge measurement; Conducting materials; Current measurement; Doping; Nanofabrication; Photovoltaic cells; Physics computing; Semiconductor process modeling; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE

Conference_Location

Anchorage, AK

ISSN

0160-8371

Print_ISBN

0-7803-5772-8

Type

conf

DOI

10.1109/PVSC.2000.915954

Filename

915954