• DocumentCode
    3029698
  • Title

    Full comparison between analytical results, electrical modeling and measurements for the noise behavior of a SiGe HBT

  • Author

    Pacheco-Sanchez, Anibal ; Enciso-Aguilar, Mauro ; Rodriguez-Mendez, Luis

  • Author_Institution
    Dept. de Maestria en Cienc. en Ing. de Telecomun., Inst. Politec. Nac., Mexico City, Mexico
  • fYear
    2010
  • fDate
    15-17 Sept. 2010
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    In this paper we proposed a model for describe noise in SiGe HBTs that is implemented in software ADS and analyzed through a rigorous method described by Hudec. Results for both, modeled and analytical results are compared between them and experimental results.
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor device noise; semiconductor materials; HBT; SiGe; electrical modeling; noise; software ADS; Analytical models; Heterojunction bipolar transistors; Integrated circuits; Noise; Noise measurement; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ANDESCON, 2010 IEEE
  • Conference_Location
    Bogota
  • Print_ISBN
    978-1-4244-6740-2
  • Type

    conf

  • DOI
    10.1109/ANDESCON.2010.5632410
  • Filename
    5632410
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3029698