Title :
Full comparison between analytical results, electrical modeling and measurements for the noise behavior of a SiGe HBT
Author :
Pacheco-Sanchez, Anibal ; Enciso-Aguilar, Mauro ; Rodriguez-Mendez, Luis
Author_Institution :
Dept. de Maestria en Cienc. en Ing. de Telecomun., Inst. Politec. Nac., Mexico City, Mexico
Abstract :
In this paper we proposed a model for describe noise in SiGe HBTs that is implemented in software ADS and analyzed through a rigorous method described by Hudec. Results for both, modeled and analytical results are compared between them and experimental results.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor device noise; semiconductor materials; HBT; SiGe; electrical modeling; noise; software ADS; Analytical models; Heterojunction bipolar transistors; Integrated circuits; Noise; Noise measurement; Silicon germanium;
Conference_Titel :
ANDESCON, 2010 IEEE
Conference_Location :
Bogota
Print_ISBN :
978-1-4244-6740-2
DOI :
10.1109/ANDESCON.2010.5632410
