Title :
A comparative study of chemical-bath-deposited CdS, (Cd,Zn)S, ZnS, and In(OH)xSy buffer layer for CIGS-based solar cells
Author :
Huang, C.H. ; Li, Sheng S. ; Rieth, L. ; Halani, A. ; Fisher, M.L. ; Song, Jiyon ; Anderson, T.J. ; Holloway, P.H.
Author_Institution :
Florida Univ., Gainesville, FL, USA
Abstract :
In this paper a comparative study of CdS, (Cd,Zn)S, ZnS, and In(OH)xSy buffer layers deposited by chemical bath deposition (CBD) has been made using X-ray photoelectron spectroscopy (XPS) analysis and J-V measurements. J-V characteristics of the CIGS and CIGSS solar cells deposited with Cd-free alternative buffer layers were measured and compared with the cells deposited with CBD CdS buffer layers. The results show comparable performance among these cells, and further optimization of the deposition conditions should improve the performance of the cells deposited with alternative buffer layers
Keywords :
ESCA; II-VI semiconductors; X-ray photoelectron spectra; cadmium compounds; copper compounds; gallium compounds; indium compounds; solar cells; ternary semiconductors; zinc compounds; (Cd,Zn)S; (CdZn)S; CIGS-based solar cells; Cd-free alternative buffer layers; CdS; Cu(InGa)Se2; In(OH)xSy; In(OHS); J-V measurements; X-ray photoelectron spectroscopy; XPS; ZnS; buffer layers; chemical bath deposition; deposition conditions; optimization; performance; Buffer layers; Chemical analysis; Chemical technology; Photonic band gap; Photovoltaic cells; Solids; Substrates; Transistors; Zinc compounds; Zinc oxide;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.915961
