Dependency of IV characteristics of GaAs MESFET on optical illumination

Author

Ali, N.T. ; Rodriguez-Tellez, J. ; Mezher, K. ; Navarro, C. ; Tazon, A. ; Mediavilla, A. ; Fernandez, T.

Author_Institution

Etisalat Coll., Sharjah, United Arab Emirates

Volume

1

fYear

2003

fDate

14-17 Dec. 2003

Firstpage

1

Abstract

A high-resolution LED laser based optical measurement system is described to observe the optical dependence of the IV characteristics of a GaAs MESFET device when its surface is probed using a narrow optical beam. The results presented demonstrate the significant effect of illuminating the borders of the device along the gate and drain junctions due to external border and photo-voltaic effects.

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; lighting; measurement by laser beam; photoconductivity; photovoltaic effects; semiconductor device measurement; semiconductor lasers; GaAs; MESFET; device border illumination; external effects; gate/drain junction; high-resolution LED laser; laser based optical measurement system; narrow optical beam surface probing; optical illumination IV characteristics dependency; photo-conductive effects; photo-voltaic effects; Diode lasers; Fingers; Gallium arsenide; Light emitting diodes; Lighting; MESFETs; Optical devices; Optical surface waves; Surface emitting lasers; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2003. ICECS 2003. Proceedings of the 2003 10th IEEE International Conference on

Print_ISBN

0-7803-8163-7

Type

conf

DOI

10.1109/ICECS.2003.1301961

Filename

1301961