Interfacial optical spectra in amorphous silicon based pin solar cells

Author

Zhu, Kai ; Lyou, J.H. ; Schiff, E.A. ; Crandall, R.S. ; Ganguly, G. ; Hegedus, S.S.

Author_Institution

Dept. of Phys., Syracuse Univ., NY, USA

fYear

2000

fDate

2000

Firstpage

725

Lastpage

727

Abstract

We present infrared transmittance and reflection modulation spectra for changes in the reverse bias voltage across a variety of amorphous silicon (a-Si:H) based pin and min solar cells and diodes. The spectra originate with the change in charge state of levels near the two intrinsic-layer interfaces. The spectra vary significantly for differing interfaces, and we therefore propose their application to ex situ monitoring of the interfaces in solar cell manufacturing. The measurements also support the model that phosphorus doping occurs through dopant complex formation at the concentrations commonly used for solar cell fabrication

Keywords

amorphous semiconductors; defect absorption spectra; elemental semiconductors; hydrogen; impurity absorption spectra; infrared spectra; modulation spectra; phosphorus; process monitoring; reflectivity; semiconductor doping; silicon; solar cells; Si:H,P; amorphous silicon based pin solar cells; charge state; diodes; dopant complex formation; ex situ monitoring; infrared transmittance; interfacial optical spectra; intrinsic-layer interfaces; min solar cells; model; phosphorus doping; reflection modulation spectra; reverse bias voltage; solar cell fabrication; solar cell manufacturing; Amorphous silicon; Diodes; Infrared spectra; Manufacturing; Monitoring; Optical modulation; Optical reflection; Photovoltaic cells; Semiconductor process modeling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE

Conference_Location

Anchorage, AK

ISSN

0160-8371

Print_ISBN

0-7803-5772-8

Type

conf

DOI

10.1109/PVSC.2000.915976

Filename

915976