Title :
A balanced distributed preamplifier using MMIC GaAs MESFET technology
Author :
Nguyen, T.L. ; Freundorfer, A.P.
Author_Institution :
Dept. of Electr. & Comput. Eng., Queen´´s Univ., Kingston, Ont., Canada
Abstract :
A MMIC balanced preamplifier was fabricated using a 0.8 μm gate length process. A 45 dBΩ transimpedance gain, a 6 GHz bandwidth, a 10 pA/√(Hz) input noise and a 12 dB CMRR were measured
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC amplifiers; differential amplifiers; distributed amplifiers; field effect MMIC; gallium arsenide; preamplifiers; 0.8 micron; 6 GHz; CMRR; GaAs; MMIC GaAs MESFET technology; balanced distributed preamplifier; bandwidth; input noise; transimpedance gain; Bandwidth; Frequency; Gallium arsenide; Impedance; Low-frequency noise; MESFETs; MMICs; Noise reduction; Photodiodes; Preamplifiers;
Conference_Titel :
Electrical and Computer Engineering, 1996. Canadian Conference on
Conference_Location :
Calgary, Alta.
Print_ISBN :
0-7803-3143-5
DOI :
10.1109/CCECE.1996.548055
