DocumentCode
3030135
Title
11GHz CMOS ring oscillator
Author
Tiwari, Kriti ; Kumar, Abhishek
Author_Institution
Dept. of ECE, Lovely Prof. Univ., Jalandhar, India
fYear
2015
fDate
15-16 May 2015
Firstpage
1280
Lastpage
1283
Abstract
This paper presents the design and performance analysis of a ring oscillator using CMOS 90nm technology. A ring oscillator contains odd number of cascaded inverter in which output is oscillating between high and low level. Inverter with minimum delay is best choice for frequency generation. Delay of inverter can reduce by adding secondary inputs and switching these earlier than the primary inputs. High oscillation frequency corporate narrow bandwidth. In this paper, a method to enhance bandwidth has been introduced. 600MHZ bandwidth can be achieved while oscillation frequency is 11GHz.
Keywords
CMOS integrated circuits; invertors; microwave oscillators; oscillators; CMOS ring oscillator; CMOS technology; bandwidth 600 MHz; cascaded inverter; frequency 11 GHz; frequency generation; inverter delay; size 90 nm; CMOS integrated circuits; Capacitance; Delays; Inverters; Ring oscillators; Voltage control; Ring oscillator; VCO; cadence; delay; frequency; variable delay;
fLanguage
English
Publisher
ieee
Conference_Titel
Computing, Communication & Automation (ICCCA), 2015 International Conference on
Conference_Location
Noida
Print_ISBN
978-1-4799-8889-1
Type
conf
DOI
10.1109/CCAA.2015.7148572
Filename
7148572
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