DocumentCode :
3030200
Title :
Status of amorphous silicon alloy solar cells and modules made near the onset of microcrystallinity
Author :
Yang, Jeffrey ; Banerjee, Arindam ; Lord, Kenneth ; Guha, Subhendu
Author_Institution :
United Solar Syst. Corp., Troy, MI, USA
fYear :
2000
fDate :
2000
Firstpage :
742
Lastpage :
745
Abstract :
Amorphous silicon (a-Si) alloy solar cells made near the onset of micro-crystallinity exhibit superior characteristics. The amorphous to microcrystalline transition depends critically on the hydrogen dilution used during the film growth and the cell thickness. Cell open-circuit voltage (Voc) was used to determine the transition threshold for various hydrogen dilutions. Devices made on the transition edge exhibit a significant reduction in Voc and a dispersion of its values due to nonuniform microcrystallite inclusions in an amorphous matrix. The best cells are made in the amorphous region just below the threshold. Status of a-Si and a-SiGe alloy component cells suitable for use in high efficiency triple-junction devices is presented. Using near threshold conditions, a large-area (~922cm2) fully encapsulated triple-junction module with an initial aperture-area efficiency of 11.9% has been achieved and confirmed by NREL
Keywords :
Ge-Si alloys; amorphous semiconductors; crystallisation; elemental semiconductors; inclusions; p-n heterojunctions; semiconductor growth; semiconductor thin films; silicon; solar cells; 11.9 percent; Si; SiGe; a-Si solar cells; a-SiGe solar cells; amorphous to microcrystalline transition; cell thickness; film growth; fully encapsulated triple-junction module; high efficiency triple-junction devices; hydrogen dilution; microcrystallinity onset; open-circuit voltage; photovoltaic characteristics; solar cell modules; transition threshold; Amorphous materials; Amorphous silicon; Circuits; Hydrogen; Photonic band gap; Photovoltaic cells; Semiconductor films; Silicon alloys; Solar system; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
ISSN :
0160-8371
Print_ISBN :
0-7803-5772-8
Type :
conf
DOI :
10.1109/PVSC.2000.915990
Filename :
915990
Link To Document :
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