Structural and optical properties of textured ZnO:Ga films for large area thin film solar cells

Author

Kishimoto, K. ; Ouchida, T. ; Tachibana, S. ; Sannomiya, H. ; Nomoto, K.

Author_Institution

Sharp Corp., Nara, Japan

fYear

2000

fDate

2000

Firstpage

754

Lastpage

757

Abstract

The authors have tried to prepare the texture structure with transparent conducting oxide on the glass substrate by post etching ZnO:Ga films in acetic acid. It was confirmed that the good textured ZnO:Ga films with (002) growth orientation for thin film solar cells was fabricated by adequate etching of the ZnO:Ga films in acetic acid. By careful controlling the uniformity of the orientation of ZnO:Ga films, they achieved to fabricate good textured ZnO:Ga films for a-Si:H single junction solar cell submodule with a size of 650×455mm²

Keywords

II-VI semiconductors; amorphous semiconductors; elemental semiconductors; etching; gallium; hydrogen; rough surfaces; semiconductor device measurement; semiconductor device testing; semiconductor doping; semiconductor thin films; silicon; solar cells; surface texture; zinc compounds; (002) growth orientation; 455 mm; 650 mm; Si:H; ZnO:Ga; a-Si:H large-area thin-film solar cells; acetic acid; glass substrate; optical properties; post etching; solar cell submodule fabrication; structural properties; texture structure; textured ZnO:Ga films; Conductive films; Conductivity; Etching; Glass; Hydrogen; Optical films; Photovoltaic cells; Plasma temperature; Substrates; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE

Conference_Location

Anchorage, AK

ISSN

0160-8371

Print_ISBN

0-7803-5772-8

Type

conf

DOI

10.1109/PVSC.2000.915993

Filename

915993