Title :
Fabrication technology of a-Si/a-SiGe/a-SiGe triple-junction plastic film substrate solar cells
Author :
Yoshida, T. ; Tabuchi, K. ; Takano, A. ; Tanda, M. ; Sasaki, T. ; Sato, H. ; Fujikake, S. ; Ichikawa, Y. ; Harashima, K.
Author_Institution :
Fuji Electr. Corp. Res. & Dev. Ltd., Kanagawa, Japan
Abstract :
Device design and deposition conditions of a-Si/a-SiGe/a-SiGe triple-junction solar cells were studied. To optimize their device structure, we applied several technologies such as a-SiO:H window p-layer for top cell, low temperature deposited μc-Si p-layer for middle/bottom cells and hydrogen-dilution technique for a-SiGe:H i-layers. As a result, we obtained 1 cm2 cell with 11% stabilized efficiency. We found out effective deposition parameters such as increasing both hydrogen-dilution ratio and RF-power for Ge/Si>0.5. In addition, we presented newly designed apparatus for the triple-junction 40 cm×80 cm solar cells
Keywords :
Ge-Si alloys; amorphous semiconductors; elemental semiconductors; silicon; solar cells; 11 percent; RF-power; Si; SiGe; SiO:H; a-Si/a-SiGe/a-SiGe triple-junction plastic film substrate solar cells; a-SiGe:H i-layers; a-SiO:H window p-layer; deposition conditions; device design; device structure; effective deposition parameters; efficiency; fabrication technology; hydrogen-dilution technique; low temperature deposited μc-Si p-layer; top cell; Abstracts; Amorphous silicon; Fabrication; Mass production; Photovoltaic cells; Plastic films; Radio frequency; Research and development; Substrates; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.915995
