DocumentCode :
3030315
Title :
Key issues for the efficiency improvement of silicon basis stacked solar cells
Author :
Hamakawa, Yoshihiro ; Takakura, Hideyuki
Author_Institution :
Ritsumeikan Univ., Shiga, Japan
fYear :
2000
fDate :
2000
Firstpage :
766
Lastpage :
771
Abstract :
Aiming for the development of high efficiency with low cost next generation solar cells, a series of systematic investigations has been made on a-Si//poly(μc)-Si thin film stacked solar cells. The basic concept of multi-band gap stacked solar cell and its historical background on the selection of material combinations are briefly introduced. Secondly, some key issues for efficiency improvement on the a-Si top cell are demonstrated. Then, a series of the experimental approaches on the double heterostructure a-Si top cell along with the issues are presented and obtained optimum design parameters on the a-Si top cell are reported. Thirdly, current topics on the bottom cell technologies are classified with active material thickness and their present status are overviewed. Then, some recent technologies on the microcrystalline (μc) basis bottom cells are reviewed. Finally a comparison is made on the realistic achievable theoretical efficiency obtained from computer simulation with some of the top data and remaining problems are discussed
Keywords :
amorphous semiconductors; elemental semiconductors; silicon; solar cells; Si; a-Si top cell; a-Si//poly(μc)-Si thin film stacked solar cells; active material thickness; bottom cell technologies; computer simulation; double heterostructure a-Si top cell; efficiency improvement; low cost next generation solar cells; material combinations; microcrystalline basis bottom cells; multi-band gap stacked solar cell; optimum design parameters; silicon basis stacked solar cells; Absorption; Amorphous materials; Costs; Equivalent circuits; Heterojunctions; Photonics; Photovoltaic cells; Photovoltaic systems; Silicon; Solar power generation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
ISSN :
0160-8371
Print_ISBN :
0-7803-5772-8
Type :
conf
DOI :
10.1109/PVSC.2000.915996
Filename :
915996
Link To Document :
بازگشت