Multi-walled carbon nanotube impedance

In future technologies, people will confront with traditional Cu interconnect problems and there is a widespread demand for single-walled carbon nanotube (SWCNT) and multi-walled carbon nanotube (MWCNT). One of the most important parts in carbon nanotube interconnects is their impedance. Thus we investigate impedance, especially dc resistance, in multi walled carbon nano tube interconnect in low and high bias voltages for different geometries. The total dc resistance of an MWCNT is then calculated and an equation was obtained. We have also investigated the behavior of MWCNTs, in both low and high damping modes, in high bias regime. The results for delay and power showed better performance for MWCNT´s interconnect compared to those for Cu´s.