Title :
Effects of oxygen impurity on microcrystalline silicon films
Author :
Kamei, Toshihiro ; Wada, Takehito ; Matsuda, Akihisa
Author_Institution :
Electrotech. Lab., Tsukuba, Japan
Abstract :
We have systematically studied the effects of oxygen impurities on the crystal quality and electrical properties of hydrogenated microcrystalline Si films (μc-Si:H) grown at 200°C. Two threshold oxygen concentrations [0]s are observed: crystal quality does not deteriorate below ≈1×1020 cm-3 of [0], while carrier density increase rapidly above ≈1×1018 cm-3 of [0]. The electron carrier density obeys 1.4 th power law of [0] in the range between 1×1018 and 1×10 20 cm-3. This superlinear relationship implies that oxygen aggregates act as donors. Lower temperature (≈200°C) formation of oxygen aggregates is discussed
Keywords :
carrier density; elemental semiconductors; grain size; hydrogen; impurities; impurity distribution; oxygen; semiconductor thin films; silicon; solar cells; μc-Si:H; 200 degC; Si:H,O; crystal quality; donors; electrical properties; electron carrier density; hydrogenated microcrystalline Si films; oxygen aggregates; oxygen impurity; solar cell; superlinear relationship; threshold oxygen concentrations; Crystallization; Doping; Grain size; Impurities; Nitrogen; Oxygen; Plasma temperature; Semiconductor films; Silicon; Substrates;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.916000
