Title :
Microcrystalline Si and (Si,Ge) solar cells on plastic substrates
Author :
Dalal, Vikram L. ; Erickson, Karl
Author_Institution :
Dept. of Electr. Eng. & Comput. Eng., Iowa State Univ., Ames, IA, USA
Abstract :
We report on the growth of microcrystalline Si and (Si,Ge) films and devices on polyimide substrates. The films and devices were grown using remote plasma CVD process using a remote, low pressure ECR reactor. The substrates were Mo coated polyimide. The devices were of the p-n-n+ type. The crystalline quality of the films was determined using Raman measurements. Novel buffer layers were used to increase the voltage in the device. The devices show excellent voltages, fill factors and quantum efficiency
Keywords :
Ge-Si alloys; Raman spectra; elemental semiconductors; plasma CVD; semiconductor growth; semiconductor materials; silicon; solar cells; (Si,Ge) solar cells; Mo coated polyimide; Raman measurements; Si; Si:H solar cells; SiGe; buffer layers; crystalline quality; fill factors; growth; low pressure ECR reactor; microcrystalline Si; p-n-n+ type devices; plastic substrates; polyimide substrates; quantum efficiency; remote plasma CVD process; voltage; Buffer layers; Crystallization; Inductors; Photovoltaic cells; Plasma devices; Plasma measurements; Plastics; Polyimides; Semiconductor films; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.916002
