DocumentCode
3030484
Title
Energy efficient power MOSFETs
Author
Tack, Marnix
Author_Institution
Power Technol. Centre, ON Semicond., Oudenaarde, Belgium
fYear
2010
fDate
2-4 June 2010
Firstpage
159
Lastpage
163
Abstract
An overview is given of the main technology trends and innovations in Power MOSFET transistors ranging from LV(<;50V), MV (50V-200V) to HV (200V-1000V), in view of the needs for high energy efficient power management systems. Alternatives to MOSFET, like IGBT and GaN-HEMT, are briefly highlighted and discussed.
Keywords
gallium compounds; high electron mobility transistors; insulated gate bipolar transistors; power MOSFET; GaN; HEMT; IGBT; MOSFET transistors; energy efficient Power MOSFET; power management systems; voltage 200 V to 1000 V; voltage 50 V to 200 V; Energy efficiency; Energy management; Insulated gate bipolar transistors; MOSFETs; Monolithic integrated circuits; Power system management; Power transistors; Switching frequency; Technological innovation; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
IC Design and Technology (ICICDT), 2010 IEEE International Conference on
Conference_Location
Grenoble
Print_ISBN
978-1-4244-5773-1
Type
conf
DOI
10.1109/ICICDT.2010.5510264
Filename
5510264
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