DocumentCode :
3030527
Title :
Design approach to improve thermo-mechanical reliability for high-integrated passive circuits
Author :
Nongaillard, M. ; Allard, B. ; Jacqueline, S.
Author_Institution :
IPDIA, Caen, France
fYear :
2010
fDate :
2-4 June 2010
Firstpage :
151
Lastpage :
154
Abstract :
The use of integrated passive components in circuit design and the reliability of this type of circuits are scarcely covered in literature. The fabrication of high-density passive components generates stress in the silicon wafer and the manufacturing reliability of the passive chips is an important issue. The reliability is assessed using various accelerating tests including humidity and thermal stress. Solving the reliability issue calls for process-based actions and desgin-based actions, namely Design-for-Manufacturing. The paper introduces a Design-for-Manufacturing method called stress-relief method. The objective is to increase the design robustness against thermal cycling test. The stress-relief uses sacrificial structures. Various options are detailed in the paper and their respective efficiency is compared with experimental passive thermal cycling. The method does not need any process modification and the required silicon area is small.
Keywords :
design for manufacture; integrated circuit design; integrated circuit manufacture; integrated circuit reliability; accelerating tests; circuit design; circuit reliability; design robustness; design-for-manufacturing; high-density passive components fabrication; high-integrated passive circuits; humidity; integrated passive components; manufacturing reliability; passive chips; silicon wafer; stress-relief method; thermal cycling test; thermal stress; thermo-mechanical reliability; Circuit synthesis; Circuit testing; Fabrication; Integrated circuit reliability; Life estimation; Manufacturing; Passive circuits; Silicon; Thermal stresses; Thermomechanical processes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IC Design and Technology (ICICDT), 2010 IEEE International Conference on
Conference_Location :
Grenoble
Print_ISBN :
978-1-4244-5773-1
Type :
conf
DOI :
10.1109/ICICDT.2010.5510266
Filename :
5510266
Link To Document :
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