Title :
Fast deposition of μc-Si:H films from Ar-diluted SiH4 plasma in RF glow discharge
Author :
Das, Debajyoti ; Jana, Madhusudan ; Barua, A.K.
Author_Institution :
Energy Res. Unit, Indian Assoc. for the Cultivation of Sci., Calcutta, India
Abstract :
Using Ar as diluent for SiH4 in RF glow discharge, we obtained undoped and doped μc-Si:H films having high σD low ΔE and low α; exhibiting sharp crystallographic rings in the electron diffraction pattern, c-Si grains of 100 Å diameter in the micrograph and intense Raman peak around 520 cm-1 . The films were prepared at a remarkably high deposition rate of 50-70 Å/min contributed from SiH4 having a flow rate of 1 SCCM, and hence it provides enormous promise towards an economic throughput in the fabrication of devices using this material
Keywords :
Raman spectroscopy; electron diffraction crystallography; elemental semiconductors; high-frequency discharges; hydrogen; plasma CVD; plasma CVD coatings; semiconductor thin films; silicon; solar cells; μc-Si:H films deposition; 100 A; Ar; Ar diluent; Ar-diluted SiH4 plasma; RF glow discharge; Si:H; SiH4; c-Si grains; doped μc-Si:H films; electron diffraction pattern; flow rate; intense Raman peak; micrograph; sharp crystallographic rings; solar cells; undoped μc-Si:H films; Amorphous materials; Argon; Bonding; Conductive films; Conductivity; Crystallization; Glow discharges; Hydrogen; Plasmas; Radio frequency;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.916012
