DocumentCode
3030681
Title
Progress and challenges of tungsten-filled through-silicon via
Author
Triyoso, D.H. ; Dao, T.B. ; Kropewnicki, T. ; Martinez, F. ; Noble, R. ; Hamilton, M.
Author_Institution
Freescale Semicond. Inc., Austin, TX, USA
fYear
2010
fDate
2-4 June 2010
Firstpage
118
Lastpage
121
Abstract
Through Silicon Via (TSV) has been used for back-end packaging and more recently, for front end active device integration. In this work we report recent progress and challenges for via cleaning, via filling and wafer bow/stress monitoring. Furthermore, the importance of preparation technique for accurate characterization of tungsten-filled TSV profile will be presented.
Keywords
cleaning; integrated circuit packaging; three-dimensional integrated circuits; tungsten; W; back-end packaging; cleaning; front end active device integration; tungsten-filled TSV; tungsten-filled through-silicon via; wafer bow-stress monitoring; Bonding; Etching; Filling; Glass; Packaging; Polymers; Silicon; Stress; Through-silicon vias; Tungsten;
fLanguage
English
Publisher
ieee
Conference_Titel
IC Design and Technology (ICICDT), 2010 IEEE International Conference on
Conference_Location
Grenoble
Print_ISBN
978-1-4244-5773-1
Type
conf
DOI
10.1109/ICICDT.2010.5510274
Filename
5510274
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