DocumentCode
3030723
Title
Direct bonding for wafer level 3D integration
Author
Di Cioccio, Lea ; Radu, Ionut ; Gueguen, Pierric ; Sadaka, Mariam
Author_Institution
LETI, CEA, Grenoble, France
fYear
2010
fDate
2-4 June 2010
Firstpage
110
Lastpage
113
Abstract
3D integration is a promising and fast growing field that addresses the convergence of Moore´s Law and more than Moore. 3D integration offers higher performance, higher density, higher functionality, smaller form factor, and potential cost reduction. With this emerging field, new and improved technologies will be necessary to meet the associated manufacturing challenges. This paper describes some 3D building blocks describing oxide to oxide and metal to metal bonding with alignment.
Keywords
integrated circuit bonding; three-dimensional integrated circuits; Moore law; direct bonding; metal to metal bonding; oxide to oxide bonding; wafer level 3D integration; Copper; Monitoring; Moore´s Law; Research and development; Silicon; Technology management; Temperature; Thermal management; Wafer bonding; Wiring; 3D technology; aligned bonding; copper direct bonding; oxide direct bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
IC Design and Technology (ICICDT), 2010 IEEE International Conference on
Conference_Location
Grenoble
Print_ISBN
978-1-4244-5773-1
Type
conf
DOI
10.1109/ICICDT.2010.5510276
Filename
5510276
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