• DocumentCode
    3030723
  • Title

    Direct bonding for wafer level 3D integration

  • Author

    Di Cioccio, Lea ; Radu, Ionut ; Gueguen, Pierric ; Sadaka, Mariam

  • Author_Institution
    LETI, CEA, Grenoble, France
  • fYear
    2010
  • fDate
    2-4 June 2010
  • Firstpage
    110
  • Lastpage
    113
  • Abstract
    3D integration is a promising and fast growing field that addresses the convergence of Moore´s Law and more than Moore. 3D integration offers higher performance, higher density, higher functionality, smaller form factor, and potential cost reduction. With this emerging field, new and improved technologies will be necessary to meet the associated manufacturing challenges. This paper describes some 3D building blocks describing oxide to oxide and metal to metal bonding with alignment.
  • Keywords
    integrated circuit bonding; three-dimensional integrated circuits; Moore law; direct bonding; metal to metal bonding; oxide to oxide bonding; wafer level 3D integration; Copper; Monitoring; Moore´s Law; Research and development; Silicon; Technology management; Temperature; Thermal management; Wafer bonding; Wiring; 3D technology; aligned bonding; copper direct bonding; oxide direct bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IC Design and Technology (ICICDT), 2010 IEEE International Conference on
  • Conference_Location
    Grenoble
  • Print_ISBN
    978-1-4244-5773-1
  • Type

    conf

  • DOI
    10.1109/ICICDT.2010.5510276
  • Filename
    5510276