Large area deposition of hydrogenated amorphous silicon by VHF-PECVD using novel electrodes

Author

Ito, Noboru ; Kondo, Makoto ; Matsuda, Akihisa

Author_Institution

ANELVA Corp., Tokyo, Japan

fYear

2000

fDate

2000

Firstpage

900

Lastpage

903

Abstract

A novel discharge source capable of depositing a-Si:H films on large area has been developed. This discharge source consists of “U” shaped loop-antenna. A number of antennas were arranged in parallel to each other, forming one plane in front of a substrate. a-Si:H was deposited on a 1000 mm×500 mm glass substrate at 0.4 nm/sec using VHF (81 MHz) plasma. The nonuniformity of deposition rate in the direction along the antenna was about ±80% when the VHF power was equally fed to each antenna with a continuous mode. Whereas, this nonuniformity could be suppressed to less than ±10% by controlling the power feeding method with a pulse mode

Keywords

amorphous semiconductors; electrodes; elemental semiconductors; glass; hydrogen; loop antennas; plasma CVD; plasma CVD coatings; semiconductor growth; semiconductor thin films; silicon; substrates; 1000 m; 500 mm; 81 MHz; Si:H; U shaped loop-antenna; VHF plasma; VHF-PECVD; deposition rate nonuniformity; discharge source; electrodes; glass substrate; hydrogenated amorphous silicon; large area deposition; nonuniformity suppression; pulse mode power feeding method; Amorphous silicon; Antenna feeds; Antennas and propagation; Directive antennas; Electrodes; Fault location; Frequency; Plasma simulation; Plasma waves; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE

Conference_Location

Anchorage, AK

ISSN

0160-8371

Print_ISBN

0-7803-5772-8

Type

conf

DOI

10.1109/PVSC.2000.916029

Filename

916029