Reliability concerns in High-K/Metal gate technologies

Author

Garros, X. ; Cassé, M. ; Reimbold, G. ; Martin, F. ; Brunet, L. ; Andrieu, F. ; Boulanger, F.

Author_Institution

Leti Minatec Lab., CEA, Grenoble, France

fYear

2010

fDate

2-4 June 2010

Firstpage

90

Lastpage

93

Abstract

The paper presents an overview of the Bias Temperature Instabilities (BTI) reliability in High-k/Metal gate technologies. We show that mobility performance and NBTI reliability are strongly correlated and that they are affected by the diffusion of nitrogen species N at the Si interface. PBTI, more sensitive to bulk oxide traps, is strongly reduced in very thin dielectric films. Reducing the metal gate thickness favors the reduction of mobility degradations and NBTI, but, also strongly enhances PBTI, due to a complex set of reactions in the gate oxide. Trade off must be found to obtain a great trade off between device performance and reliability requirements.

Keywords

CMOS integrated circuits; elemental semiconductors; high-k dielectric thin films; integrated circuit reliability; silicon; CMOS nodes; NBTI reliability; Si; bias temperature instabilities reliability; bulk oxide traps; high-K-metal gate technologies; mobility degradation reduction; thin dielectric films; Atherosclerosis; Degradation; High K dielectric materials; High-K gate dielectrics; MOSFETs; Niobium compounds; Nitrogen; Paper technology; Tin; Titanium compounds; High-K; Metal Gate; NBTI; Reliability; mobility;

fLanguage

English

Publisher

ieee

Conference_Titel

IC Design and Technology (ICICDT), 2010 IEEE International Conference on

Conference_Location

Grenoble

Print_ISBN

978-1-4244-5773-1

Type

conf

DOI

10.1109/ICICDT.2010.5510287

Filename

5510287