Temperature dependence at various intrinsic a-Si:H growth rates of p-i-n deposited solar cells

Author

Korevaar, B.A. ; Smit, C. ; Smets, A.H.M. ; van Swaaij, R.A.C.M.M. ; Schram, D.C. ; van de Sanden, M.C.M.

Author_Institution

Lab. of Electron. Components, Delft Univ. of Technol., Netherlands

fYear

2000

fDate

2000

Firstpage

916

Lastpage

919

Abstract

With a cascaded arc expanding thermal plasma, intrinsic solar grade amorphous silicon can be deposited at growth rates varying from 2 to 100 Å/s. The temperature above which good material is obtained becomes higher for higher growth rates. Higher deposition temperatures affect the p-layer within p-i-n grown solar cells, which will result in other optimum deposition temperatures of the i-layer. In this paper, the authors address the dependence of the p-i-n solar cell performance on the deposition rate and deposition temperature

Keywords

elemental semiconductors; hydrogen; plasma CVD; plasma CVD coatings; semiconductor device measurement; semiconductor device testing; semiconductor doping; semiconductor growth; semiconductor thin films; silicon; solar cells; RF-PECVD; Si:H; cascaded arc expanding thermal plasma; deposition temperature; growth rates; intrinsic a-Si:H growth rates; p-i-n deposited solar cells; p-i-n solar cell performance; PIN photodiodes; Photovoltaic cells; Physics; Plasma density; Plasma materials processing; Plasma sources; Plasma temperature; Production; Temperature dependence; Thermal expansion;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE

Conference_Location

Anchorage, AK

ISSN

0160-8371

Print_ISBN

0-7803-5772-8

Type

conf

DOI

10.1109/PVSC.2000.916033

Filename

916033