Comparison between isolated SCR & embedded dual isolated SCR power devices for ESD power clamp in C45nm CMOS technology

Author

Galy, P. ; Bourgeat, J. ; Jimenez, J. ; Entringer, C. ; Dray, A. ; Jacquier, B.

Author_Institution

STMicroelectronics, Crolles, France

fYear

2010

fDate

2-4 June 2010

Firstpage

47

Lastpage

50

Abstract

The Electrostatic Discharge (ESD) protection for advanced CMOS technologies is a challenge due to the technology scaling down. The main purpose of this paper is to present and compare silicon results in C45nm CMOS technology of a single pitch ESD protection using isolated Silicon Controlled Rectifier (SCR) and dual isolated SCR. These two protection structures with dynamic trigger circuit will be compared. Also, the power pad clamps in 1 pitch IO are qualified through 100 ns TLP. Silicon result show that ESD robustness reaches 4 kV HBM, 200 V MM and 500 V CDM for a 64 BGA package. IO power pads are also immune to Latch Up and power sequence.

Keywords

CMOS integrated circuits; electrostatic discharge; thyristors; trigger circuits; BGA package; CMOS technology; ESD power clamp; IO power pads; dynamic trigger circuit; electrostatic discharge protection; embedded dual isolated SCR power devices; isolated silicon controlled rectifier; single pitch ESD protection; size 45 nm; voltage 200 V; voltage 4 kV; voltage 500 V; CMOS technology; Clamps; Electrostatic discharge; Isolation technology; Packaging; Protection; Robustness; Silicon; Thyristors; Trigger circuits; ESD protection; SCR; dual SCR; power clamp;

fLanguage

English

Publisher

ieee

Conference_Titel

IC Design and Technology (ICICDT), 2010 IEEE International Conference on

Conference_Location

Grenoble

Print_ISBN

978-1-4244-5773-1

Type

conf

DOI

10.1109/ICICDT.2010.5510292

Filename

5510292