• DocumentCode
    3031328
  • Title

    Improving Cu line Rs control using feed-forward information for CMP endpointing

  • Author

    Hu, Xiaoyuan ; Wang, Zhihong ; Tu, Wen-Chiang ; Mao, Daxin

  • Author_Institution
    CMP Div., Appl. Mater., Inc., Sunnyvale, CA, USA
  • fYear
    2010
  • fDate
    6-9 June 2010
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A promising method for controlling sheet resistance (Rs) of Cu interconnect through improved chemical mechanical planarization (CMP) endpoint capability was developed using broadband spectrometry together with feed-forward information from upstream process conditions. With this new method, the wafer-to-wafer (WTW) Rs range was reduced more than 50% compared to time-based CMP polish control.
  • Keywords
    chemical mechanical polishing; process control; CMP endpointing; Cu; broadband spectrometry; chemical mechanical planarization; controlling sheet resistance; endpoint capability; feed-forward information; time-based CMP polish control; upstream process condition; wafer-to-wafer; Chemical technology; Dielectric materials; Dielectric measurements; Electrical resistance measurement; Etching; Feedforward systems; Libraries; Process control; Thickness control; Thickness measurement; CMP; Cu line sheet resistance; in-situ process control; white light endpoint;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference (IITC), 2010 International
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    978-1-4244-7676-3
  • Type

    conf

  • DOI
    10.1109/IITC.2010.5510306
  • Filename
    5510306
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3031328