Design considerations for a 7 kV/3 kA GTO with transparent anode and buffer layer

Using a novel concept for the anode of GTO devices, the authors have developed, manufactured, and characterized full scale 4.5 kV/3 kA GTO thyristors. Utilizing a buffer layer and a transparent anode, these devices have extremely low conduction and switching losses. In this work, simulation results of 7 kV/3 kA GTO structures with a homogeneous transparent anode and a buffer layer are presented. By applying the design criteria given in the paper, 7 kV/3 kA GTO structures can be proposed, which have on-state and conduction losses comparable to those of state-of-the-art 4.5 kV/3 kA GTO thyristors