Integrated 0.35 µm BiCMOS DC-DC Boost Converter

Author

Lee, Chan-Soo ; Kim, Nam-Soo ; Ko, Hyoung-Ho

Author_Institution

Dept. of Electr. & Comput. Eng., Chungbuk Nat. Univ., Cheong-Ju, South Korea

fYear

2011

fDate

16-18 Nov. 2011

Firstpage

462

Lastpage

467

Abstract

The simulation and experimental study of current-mode DC-DC boost converter is presented in this paper The DC-DC converter is designed with a standard 0.35μm BiCMOS process. The off-chip LC filter is operated with the inductance of 1mH and capacitance of 100μF. The simulation results show the high performance DC-DC boost converter. The output voltage from simulation is obtained to be 5.8V with ripple ratio of 1.5%. The result corresponds with the experimental result within 5% error. The sensing current is obtained to be within 1mA and follows to fit the order of the aspect ratio between sensing and power MOSFET.

Keywords

BiCMOS integrated circuits; DC-DC power convertors; current-mode circuits; power MOSFET; aspect ratio; capacitance 100 muF; current 1 mA; current-mode DC-DC boost converter; integrated BiCMOS DC-DC boost converter; off-chip LC filter; power MOSFET; sensing current; size 0.35 mum; voltage 5.8 V; BiCMOS integrated circuits; FETs; Inductors; Integrated circuit modeling; MOSFET circuits; Sensors; BiCMOS; Boost converter; Current-mode; Current-sensor; Integrated; Voltage follower;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer Modeling and Simulation (EMS), 2011 Fifth UKSim European Symposium on

Conference_Location

Madrid

Print_ISBN

978-1-4673-0060-5

Type

conf

DOI

10.1109/EMS.2011.65

Filename

6131271