Achieving 26% triple junction cascade solar cell production

Author

Chiang, P.K. ; Chu, C.L. ; Yeh, Y.C.M. ; Iles, P. ; Chen, G. ; Wei, J. ; Tsung, P. ; Olbinski, J. ; Krogen, J. ; Halbe, S. ; Khemthong, S. ; Ho, F.

Author_Institution

TECSTAR/ASD, City of Industry, CA, USA

fYear

2000

fDate

2000

Firstpage

1002

Lastpage

1005

Abstract

The performance of p-on-n triple junction solar cells (GaInPa/GaAs/Ge) has steadily improved. The highest cell efficiency measured to date is 27.0%, under 1 sun, AM0 illumination. The remaining power after 1E15 e/cm² 1 MeV electron irradiation is >82%. TECSTAR has also achieved very high performance n-on-p triple junction solar cells. The remaining power for n-on-p cells after 1E15 e/cm², 1 MeV electron irradiation is 85%. TECSTAR has also developed a bypass diode, grown monolithically during MOCVD growth of all the cell layers

Keywords

III-V semiconductors; MOCVD coatings; electron beam effects; elemental semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; p-n heterojunctions; semiconductor thin films; solar cells; 1 MeV; 1 sun AM0 illumination; 27 percent; GaInPa-GaAs-Ge; GaInPa/GaAs/Ge solar cells; Ge; MOCVD growth; TECSTAR; bypass diode; electron irradiation; monolithic growth; n-on-p triple junction solar cells; p-on-n triple junction solar cells; solar cell efficiency; triple junction cascade solar cell production; very high performance; Cities and towns; Diodes; Electrons; Gallium arsenide; Lighting; MOCVD; Photovoltaic cells; Production; Sun; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE

Conference_Location

Anchorage, AK

ISSN

0160-8371

Print_ISBN

0-7803-5772-8

Type

conf

DOI

10.1109/PVSC.2000.916055

Filename

916055