DocumentCode
3031384
Title
3D TSV integration technology challenges for high volume production from fabless supply chain aspect
Author
Gu, S.Q. ; Ray, U. ; Li, Y. ; Chandrasekaran, A. ; Henderson, B. ; Nowak, M.
Author_Institution
Adv. Technol. Integration, Qualcomm, San Diego, CA, USA
fYear
2010
fDate
6-9 June 2010
Firstpage
1
Lastpage
3
Abstract
Limited battery power for wireless devices demands improvement in power efficiency while enhancing system performance. Traditional semiconductor scaling faces challenges to meet this requirement. 3D integration of multiple chips using through silicon via (TSV) is one of the technologies that can extend the performance scaling trend. However, the semiconductor industry will need to overcome many technology hurdles before 3D TSV integration can be implemented in high volume manufacturing, particularly for the fabless supply chain. This paper will review the integration challenges and recent progress in process integration, reliability, yield and cost.
Keywords
reliability; supply chains; three-dimensional integrated circuits; 3D TSV integration technology; battery power; fabless supply chain aspect; high volume manufacturing; high volume production; power efficiency; process integration; reliability; semiconductor industry; semiconductor scaling; through silicon via; wireless devices; Batteries; CMOS technology; Conducting materials; Electronics industry; Etching; Production; Silicon; Supply chains; System performance; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference (IITC), 2010 International
Conference_Location
Burlingame, CA
Print_ISBN
978-1-4244-7676-3
Type
conf
DOI
10.1109/IITC.2010.5510309
Filename
5510309
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