• DocumentCode
    3031384
  • Title

    3D TSV integration technology challenges for high volume production from fabless supply chain aspect

  • Author

    Gu, S.Q. ; Ray, U. ; Li, Y. ; Chandrasekaran, A. ; Henderson, B. ; Nowak, M.

  • Author_Institution
    Adv. Technol. Integration, Qualcomm, San Diego, CA, USA
  • fYear
    2010
  • fDate
    6-9 June 2010
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Limited battery power for wireless devices demands improvement in power efficiency while enhancing system performance. Traditional semiconductor scaling faces challenges to meet this requirement. 3D integration of multiple chips using through silicon via (TSV) is one of the technologies that can extend the performance scaling trend. However, the semiconductor industry will need to overcome many technology hurdles before 3D TSV integration can be implemented in high volume manufacturing, particularly for the fabless supply chain. This paper will review the integration challenges and recent progress in process integration, reliability, yield and cost.
  • Keywords
    reliability; supply chains; three-dimensional integrated circuits; 3D TSV integration technology; battery power; fabless supply chain aspect; high volume manufacturing; high volume production; power efficiency; process integration; reliability; semiconductor industry; semiconductor scaling; through silicon via; wireless devices; Batteries; CMOS technology; Conducting materials; Electronics industry; Etching; Production; Silicon; Supply chains; System performance; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference (IITC), 2010 International
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    978-1-4244-7676-3
  • Type

    conf

  • DOI
    10.1109/IITC.2010.5510309
  • Filename
    5510309