Temperature dependent electrical characteristics of through-si-via (TSV) interconnections

Author

Katti, G. ; Mercha, A. ; Stucchi, M. ; Tokei, Zs ; Velenis, D. ; Van Olmen, J. ; Huyghebaert, C. ; Jourdain, A. ; Rakowski, M. ; Debusschere, I. ; Soussan, P. ; Oprins, H. ; Dehaene, W. ; De Meyer, K. ; Travaly, Y. ; Beyne, E. ; Biesemans, S. ; Swinnen, B

Author_Institution

IMEC, Leuven, Belgium

fYear

2010

fDate

6-9 June 2010

Firstpage

1

Lastpage

3

Abstract

In this paper, we investigate the electrical behavior of TSV with increasing temperatures (25-150°C). TSV capacitance, leakage current and TSV resistance with varying temperatures are reported. TSV C-V characteristics are analyzed to extract the oxide charges. It is confirmed that the depletion behavior of TSV can be exploited to reduce TSV capacitance even at higher temperatures. In addition, lumped RC model of the TSV for circuit simulations is enhanced by incorporating measured TSV resistance and capacitance change due to temperature. The results are corroborated with the 2D/3D Ring Oscillator (RO) measurements at different temperatures.

Keywords

integrated circuit interconnections; leakage currents; TSV capacitance; TSV resistance; circuit simulation; electrical behavior; leakage current; lumped RC model; ring oscillator; temperature 25 degC to 150 degC; temperature dependent electrical characteristics; through-Si-via interconnections; Capacitance; Capacitance-voltage characteristics; Electric resistance; Electric variables; Electrical resistance measurement; Integrated circuit interconnections; Leakage current; Temperature dependence; Temperature measurement; Through-silicon vias; 3D ICs; Thermal behavior; Through Silicon Via (TSV);

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference (IITC), 2010 International

Conference_Location

Burlingame, CA

Print_ISBN

978-1-4244-7676-3

Type

conf

DOI

10.1109/IITC.2010.5510311

Filename

5510311