0.55 eV n/p/n MIM TPV cell development

Author

Wilt, David M. ; Clark, Eric B. ; Clevenger, Marvin B. ; Murray, Christopher S. ; Wehrer, Rebecca J.

Author_Institution

NASA Glenn Res. Center, Cleveland, OH, USA

fYear

2000

fDate

2000

Firstpage

1024

Lastpage

1027

Abstract

A monolithic interconnected module (MIM) has been described which serves as the photovoltaic converter and the spectral control mechanism in thermophotovoltaic (TPV) devices. Current MIM development has been directed toward reducing the bandgap of the device to optimize the performance for low temperature radiators (~1200 K). Low bandgap (0.55 eV) MIMs have been developed from InGaAs grown lattice mismatched to InP. A variety of buffer layer schemes have been investigated and the impact of buffer layer design on device performance has been examined

Keywords

III-V semiconductors; gallium arsenide; indium compounds; p-n heterojunctions; semiconductor device measurement; semiconductor device testing; thermophotovoltaic cells; 0.55 eV; 1200 K; InGaAs-InP; InGaAs-InP monolithic interconnected module; bandgap reduction; buffer layer design; device performance; lattice mismatch; n/p/n MIM TPV cell development; thermophotovoltaic devices; Buffer layers; Indium gallium arsenide; Indium phosphide; Optical buffering; Optical filters; Optical materials; Photonic band gap; Photovoltaic systems; Solar power generation; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE

Conference_Location

Anchorage, AK

ISSN

0160-8371

Print_ISBN

0-7803-5772-8

Type

conf

DOI

10.1109/PVSC.2000.916060

Filename

916060