• DocumentCode
    3031509
  • Title

    Inhibition of enhanced Cu oxidation on ruthenium

  • Author

    Ding, Shao-Feng ; Xie, Qi ; Waechtler, Thomas ; Lu, Hai-Sheng ; Schulz, Stefan E. ; Qu, Xin-Ping

  • Author_Institution
    Dept. of Microelectron., Fudan Univ., Shanghai, China
  • fYear
    2010
  • fDate
    6-9 June 2010
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The enhanced oxidation of Cu on Ru/diffusion barriers was observed. The in-situ X-ray diffraction results reveal that the Cu oxidation can be inhibited by doping C in either Ru adhesion layer or TaN barrier layer. The RuC/barrier becomes more robust with certain amount of C doped in Ru. ALD Cu2O on the RuC substrate was carried out and the effect of C on reduction of Cu oxide was observed.
  • Keywords
    X-ray diffraction; atomic layer deposition; carbon; copper compounds; oxidation; ruthenium; ALD copper oxide; Cu2O; Ru:C; RuC substrate; RuC/barrier; X-ray diffraction; XRD; carbon doping; carbon effect; copper oxide reduction; enhanced copper oxidation; ruthenium adhesion layer; ruthenium/diffusion barriers; tantalum nitride barrier layer; Adhesives; Annealing; Copper; Integrated circuit interconnections; Oxidation; Spectroscopy; Temperature; Tin; X-ray diffraction; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference (IITC), 2010 International
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    978-1-4244-7676-3
  • Type

    conf

  • DOI
    10.1109/IITC.2010.5510315
  • Filename
    5510315
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3031509