Title :
Inhibition of enhanced Cu oxidation on ruthenium
Author :
Ding, Shao-Feng ; Xie, Qi ; Waechtler, Thomas ; Lu, Hai-Sheng ; Schulz, Stefan E. ; Qu, Xin-Ping
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
Abstract :
The enhanced oxidation of Cu on Ru/diffusion barriers was observed. The in-situ X-ray diffraction results reveal that the Cu oxidation can be inhibited by doping C in either Ru adhesion layer or TaN barrier layer. The RuC/barrier becomes more robust with certain amount of C doped in Ru. ALD Cu2O on the RuC substrate was carried out and the effect of C on reduction of Cu oxide was observed.
Keywords :
X-ray diffraction; atomic layer deposition; carbon; copper compounds; oxidation; ruthenium; ALD copper oxide; Cu2O; Ru:C; RuC substrate; RuC/barrier; X-ray diffraction; XRD; carbon doping; carbon effect; copper oxide reduction; enhanced copper oxidation; ruthenium adhesion layer; ruthenium/diffusion barriers; tantalum nitride barrier layer; Adhesives; Annealing; Copper; Integrated circuit interconnections; Oxidation; Spectroscopy; Temperature; Tin; X-ray diffraction; X-ray scattering;
Conference_Titel :
Interconnect Technology Conference (IITC), 2010 International
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4244-7676-3
DOI :
10.1109/IITC.2010.5510315
