Modeling the effects of hydrogen on the mechanisms of dose rate sensitivity

Author

Esqueda, Ivan S. ; Barnaby, Hugh J. ; Adell, Philippe C.

Author_Institution

Sch. of Electr., Comput. & Energy Eng., Arizona State Univ., Tempe, AZ, USA

fYear

2011

fDate

19-23 Sept. 2011

Firstpage

1

Lastpage

6

Abstract

The effects of hydrogen on dose-rate sensitivity are simulated using a one-dimensional (1-D) model that incorporates the physical mechanisms contributing to dose-rate effects in metal-oxide-semiconductor (MOS) structures. Calculations show that molecular hydrogen cracking at positively charged defects may be a key reaction relating hydrogen and dose rate response. Comparison to experimental data on bipolar devices results in good agreement with the dose rate calculations of interface trap buildup.

Keywords

MIS structures; interface states; pyrolysis; 1D simulation model; MOS structure; bipolar device; dose rate calculation; dose rate response; dose rate sensitivity mechanism effect; hydrogen effect modeling; interface trap buildup; metal-oxide-semiconductor structure; molecular hydrogen cracking; one-dimensional simulation model; positively charged defect; Electron traps; Logic gates; Mathematical model; Protons; Radiation effects; Sensitivity; Dose rate; ELDRS; bipolar; hydrogen; interface traps; metal-oxide-semiconductor (MOS); silicon dioxide; total ionizing dose (TID);

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on

Conference_Location

Sevilla

ISSN

0379-6566

Print_ISBN

978-1-4577-0585-4

Type

conf

DOI

10.1109/RADECS.2011.6131290

Filename

6131290