Study of Integrated Multiple-Wavelength Quantum Well Laser Structures using QWI

Author

Choi, Kyoung Sun ; Byun, Young Tae ; Song, Jong Han ; Lee, Seok ; Woo, Deok Ha ; Kim, Sun Ho ; Jhon, Young Min ; Park, Jinwoo

Author_Institution

Photonics Research Center, Korea Institute of Science and Technology (KIST), 39-1, Hawolgok, Seoul 136-791, Korea; Department of Electronics Engineering, Korea University, Anam-dong, Sungbuk-ku, Seoul 136-701, Korea, Tel: +82-2-958-6718, E-mail: suntime@k

fYear

2006

fDate

9-13 July 2006

Firstpage

244

Lastpage

246

Abstract

Ion implantation-induced quantum well intermixing (QWI) of InGaAs/InGaAsP quantum well structure has shown to be an efficient way to fabricate photonic integrated circuits. We investigate the characteristics of a newly developed QWI with two-step thermal treatments.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optics; quantum well lasers; InGaAs; InGaAs-InGaAsP; InGaAsP; QWI; integrated multiple-wavelength quantum well laser structures; photonic integrated circuits; quantum well intermixing; Indium gallium arsenide; Indium phosphide; Monolithic integrated circuits; Photonic band gap; Photonic integrated circuits; Plasma temperature; Quantum well devices; Quantum well lasers; Sun; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Internet and Next Generation Network, 2006. COIN-NGNCON 2006. The Joint International Conference on

Conference_Location

Jeju

Print_ISBN

978-89-955301-4-6

Electronic_ISBN

978-89-955301-4-6

Type

conf

DOI

10.1109/COINNGNCON.2006.4454560

Filename

4454560