• DocumentCode
    3031724
  • Title

    Effect of carrier transport in oxides surrounding active devices on SEE in 45nm SOI SRAM

  • Author

    Turowski, Marek ; Raman, Ashok ; Alles, Michael L. ; Ball, Dennis ; King, Michael P. ; Reed, Robert A. ; Schrimpf, Ron D.

  • Author_Institution
    CFD Res. Corp. (CFDRC), Huntsville, AL, USA
  • fYear
    2011
  • fDate
    19-23 Sept. 2011
  • Firstpage
    20
  • Lastpage
    23
  • Abstract
    Three-dimensional NanoTCAD simulations of a 45 nm SOI SRAM cell indicate that the contributions of charge generation and transport in the surrounding oxides have a potentially meaningful effect on the SEU response in nanotechnologies.
  • Keywords
    SRAM chips; silicon-on-insulator; technology CAD (electronics); SEE; SEU response; SOI SRAM cell; active devices; carrier transport effect; size 45 nm; three-dimensional nanoTCAD simulations; Computational modeling; Insulators; Integrated circuit modeling; Random access memory; Single event upset; Solid modeling; Three dimensional displays; 3D; SiO2 carrier transport; Silicon-on-Insulator (SOI); TCAD; mixed-mode simulation; modeling; radiation response; single-event upset (SEU);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
  • Conference_Location
    Sevilla
  • ISSN
    0379-6566
  • Print_ISBN
    978-1-4577-0585-4
  • Type

    conf

  • DOI
    10.1109/RADECS.2011.6131294
  • Filename
    6131294
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3031724