DocumentCode
3031763
Title
A single-event-hardened CMOS operational amplifier design
Author
Blaine, Raymond W. ; Atkinson, Nicholas M. ; Kauppila, Jeffrey S. ; Armstrong, Sarah E. ; Holman, W. Timothy ; Massengill, Lloyd W.
fYear
2011
fDate
19-23 Sept. 2011
Firstpage
123
Lastpage
127
Abstract
Novel RHBD techniques are described that utilize charge sharing to mitigate voltage transients due to single event strikes in a folded cascode operational amplifier. These techniques are verified using simulations in a 180-nm CMOS process.
Keywords
CMOS integrated circuits; Integrated circuit modeling; Layout; Operational amplifiers; Semiconductor device modeling; Simulation; Transient analysis; Operational amplifier; charge sharing; sensitive node active charge cancellation (SNACC); single-event effects;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location
Sevilla, Spain
ISSN
0379-6566
Print_ISBN
978-1-4577-0585-4
Type
conf
DOI
10.1109/RADECS.2011.6131296
Filename
6131296
Link To Document