Influence of proton elastic scattering on soft error generation of SRAMs

Author

Kosmata, M. ; Auerhammer, J. ; Zier, M. ; Schlaphof, F. ; Schreiter, F. ; von Borany, J.

Author_Institution

Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany

fYear

2011

fDate

19-23 Sept. 2011

Firstpage

186

Lastpage

190

Abstract

It is known that protons usually do not deposit sufficient energy in a static random access memory (SRAM) cell to produce single-event-upsets (SEU) by direct ionization. In this work a model for the influence of elastically scattered protons is presented which explains the experimentally obtained SEU rate for protons at energies well below the Coulomb barrier threshold. A quantitative fit-parameter-free calculation of upsets is provided. Experimental results of low energy proton and helium irradiation of a 32 nm silicon-on-insulator (SOI) SRAM are presented to validate the model.

Keywords

SRAM chips; alpha-particle effects; semiconductor device models; silicon-on-insulator; Coulomb barrier threshold; SEU rate; SOI SRAM; direct ionization; fit-parameter-free upset calculation; helium irradiation; low energy proton; proton elastic scattering; silicon-on-insulator SRAM; single-event-upsets; size 32 nm; soft error generation; static random access memory; Helium; Ions; Protons; Radiation effects; Random access memory; Scattering; Silicon; SEU; SRAM; elastic scattering; proton irradiation;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on

Conference_Location

Sevilla

ISSN

0379-6566

Print_ISBN

978-1-4577-0585-4

Type

conf

DOI

10.1109/RADECS.2011.6131301

Filename

6131301