DocumentCode
3031899
Title
Impact of process variability on the radiation-induced soft error of nanometer-scale srams in hold and read conditions
Author
Griffoni, Alessio ; Zuber, Paul ; Dobrovolny, Petr ; Roussel, Philippe J. ; Linten, Dimitri ; Alles, Michael L. ; Schrimpf, Ronald D. ; Reed, Robert A. ; Massengill, Lloyd W. ; Kobayashi, Daisuke ; Simoen, Eddy ; Groeseneken, Guido
Author_Institution
Interuniv. Microelectron. Centre (imec), Leuven, Belgium
fYear
2011
fDate
19-23 Sept. 2011
Firstpage
195
Lastpage
201
Abstract
Process variation affects the soft-error sensitivity of SRAM cells. A complex dependence on the arrival time of the particle strike relative to the word-line clock is observed.
Keywords
SRAM chips; radiation hardening (electronics); arrival time; hold and read conditions; nanometer-scale SRAM; particle strike; process variability; radiation-induced soft error; soft-error sensitivity; word-line clock; Clocks; Computational modeling; Histograms; MOSFET circuits; Monte Carlo methods; Random access memory; Transistors; CMOS; SRAMs; Single Event Effect (SEE); Single Event Upset (SEU); process variability; soft error;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location
Sevilla
ISSN
0379-6566
Print_ISBN
978-1-4577-0585-4
Type
conf
DOI
10.1109/RADECS.2011.6131303
Filename
6131303
Link To Document