Title :
Radiation effects on CMOS image sensors with sub-2µm pinned photodiodes
Author :
Place, S. ; Carrere, J.-P. ; Magnan, P. ; Goiffon, V. ; Roy, F.
Author_Institution :
ST Microelectron., Crolles, France
Abstract :
A group of four commercial sensors with pixel pitches below 2μm has been irradiated with 60Co source at several total ionizing dose levels related to space applications. A phenomenological approach is proposed through behavior analysis of multiple sensors embedding different technological choices (pitch, isolation or buried oxide). A complete characterization including dark current, activation energy and temporal noise analysis allows to discuss about a degradation scheme.
Keywords :
CMOS image sensors; carbon; photodiodes; radiation effects; CMOS image sensors; Co; activation energy; dark current; degradation scheme; pinned photodiodes; radiation effects; temporal noise analysis; total ionizing dose levels; Dark current; Degradation; Interface states; Photodiodes; Radiation effects; Sensor phenomena and characterization; APS; CMOS 4T image sensor; Irradiation; activation energy; dark current; pinned photodiode; temporal noise;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
Print_ISBN :
978-1-4577-0585-4
DOI :
10.1109/RADECS.2011.6131310
