• DocumentCode
    3032000
  • Title

    Radiation effects on CMOS image sensors with sub-2µm pinned photodiodes

  • Author

    Place, S. ; Carrere, J.-P. ; Magnan, P. ; Goiffon, V. ; Roy, F.

  • Author_Institution
    ST Microelectron., Crolles, France
  • fYear
    2011
  • fDate
    19-23 Sept. 2011
  • Firstpage
    314
  • Lastpage
    320
  • Abstract
    A group of four commercial sensors with pixel pitches below 2μm has been irradiated with 60Co source at several total ionizing dose levels related to space applications. A phenomenological approach is proposed through behavior analysis of multiple sensors embedding different technological choices (pitch, isolation or buried oxide). A complete characterization including dark current, activation energy and temporal noise analysis allows to discuss about a degradation scheme.
  • Keywords
    CMOS image sensors; carbon; photodiodes; radiation effects; CMOS image sensors; Co; activation energy; dark current; degradation scheme; pinned photodiodes; radiation effects; temporal noise analysis; total ionizing dose levels; Dark current; Degradation; Interface states; Photodiodes; Radiation effects; Sensor phenomena and characterization; APS; CMOS 4T image sensor; Irradiation; activation energy; dark current; pinned photodiode; temporal noise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
  • Conference_Location
    Sevilla
  • ISSN
    0379-6566
  • Print_ISBN
    978-1-4577-0585-4
  • Type

    conf

  • DOI
    10.1109/RADECS.2011.6131310
  • Filename
    6131310
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3032000