Title :
Evaluation of surface passivation layers for bulk lifetime estimation of high resistivity silicon for radiation detectors
Author :
Rafi, J.M. ; Cardona-Safont, L. ; Zabala, M. ; Campabadal, F. ; Pellegrini, G. ; Lozano, M.
Author_Institution :
Centro Nacional de Microelectron., Barcelona
fDate :
Jan. 31 2007-Feb. 2 2007
Abstract :
With the aim to identify an appropriate low-temperature surface passivation process that could be used for bulk lifetime estimation of high resistivity (HR) (>1 kOmega-cm) silicon for radiation detectors, different candidate passivating layers were evaluated on n-type and p-type standard Czochralski (CZ), HR magnetic Czochralski (MCZ) and HR float zone (FZ)) substrates. Minority carrier lifetime measurements were performed by means of a microwave PhotoConductance Decay single point setup. The results show that SiNx PECVD layers deposited at 200degC may be used to evaluate the impact of different processing steps and treatments on the substrate characteristics for radiation detectors.
Keywords :
carrier lifetime; crystal growth from melt; particle detectors; passivation; plasma CVD; silicon; HR float zone substrate; HR magnetic Czochralski substrate; PECVD layers; bulk lifetime estimation; high resistivity silicon; low-temperature surface passivation process; microwave photoconductance decay; minority carrier lifetime measurements; n-type standard Czochralski substrate; p-type standard Czochralski substrate; radiation detectors; surface passivation layers; temperature 200 C; Charge carrier lifetime; Conductivity; Life estimation; Lifetime estimation; Microwave measurements; Passivation; Performance evaluation; Photoconductivity; Radiation detectors; Silicon; High resistivity silicon; Minority carrier lifetime; Passivation; Silicon radiation detectors;
Conference_Titel :
Electron Devices, 2007 Spanish Conference on
Conference_Location :
Madrid
Print_ISBN :
1-4244-0868-7
DOI :
10.1109/SCED.2007.383985
