DocumentCode :
3032076
Title :
MOVPE Technology for the Growth of III-V Semiconductor Structures
Author :
Garcia, I. ; Galiana, B. ; Rey-Stolle, I. ; Algora, C.
Author_Institution :
Univ. Politecnica de Madrid, Madrid
fYear :
2007
fDate :
Jan. 31 2007-Feb. 2 2007
Firstpage :
17
Lastpage :
20
Abstract :
Metal-organic vapour phase epitaxy (MOVPE) is the most widely used technology for the growth of III-V compounds in the industry today, and has become the preferred choice for the mass fabrication of a wide range of devices. The I.E.S -U.P.M acquired a research-scale Aixtron MOVPE reactor in 2000 aiming the development of III-V multi-junction concentrator solar cells in a pilot production line. In this paper, a thorough review of the MOVPE technology is presented. Then, the specific configuration, its potentialities and the research being made today at the I.E.S -U.P.M is described. Finally, the achievements and future prospects are explained.
Keywords :
III-V semiconductors; MOCVD; semiconductor growth; vapour phase epitaxial growth; III-V compounds; III-V multijunction concentrator solar cells; III-V semiconductor structures; MOVPE technology; metal-organic vapour phase epitaxy technology; Atomic layer deposition; Carbon; Epitaxial growth; Epitaxial layers; Fabrication; III-V semiconductor materials; Molecular beam epitaxial growth; Photovoltaic cells; Semiconductor materials; Solids; MOVPE; compound semiconductor; epitaxy; multijunction photovoltaic cells;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices, 2007 Spanish Conference on
Conference_Location :
Madrid
Print_ISBN :
1-4244-0868-7
Type :
conf
DOI :
10.1109/SCED.2007.383986
Filename :
4271157
Link To Document :
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