• DocumentCode
    3032076
  • Title

    MOVPE Technology for the Growth of III-V Semiconductor Structures

  • Author

    Garcia, I. ; Galiana, B. ; Rey-Stolle, I. ; Algora, C.

  • Author_Institution
    Univ. Politecnica de Madrid, Madrid
  • fYear
    2007
  • fDate
    Jan. 31 2007-Feb. 2 2007
  • Firstpage
    17
  • Lastpage
    20
  • Abstract
    Metal-organic vapour phase epitaxy (MOVPE) is the most widely used technology for the growth of III-V compounds in the industry today, and has become the preferred choice for the mass fabrication of a wide range of devices. The I.E.S -U.P.M acquired a research-scale Aixtron MOVPE reactor in 2000 aiming the development of III-V multi-junction concentrator solar cells in a pilot production line. In this paper, a thorough review of the MOVPE technology is presented. Then, the specific configuration, its potentialities and the research being made today at the I.E.S -U.P.M is described. Finally, the achievements and future prospects are explained.
  • Keywords
    III-V semiconductors; MOCVD; semiconductor growth; vapour phase epitaxial growth; III-V compounds; III-V multijunction concentrator solar cells; III-V semiconductor structures; MOVPE technology; metal-organic vapour phase epitaxy technology; Atomic layer deposition; Carbon; Epitaxial growth; Epitaxial layers; Fabrication; III-V semiconductor materials; Molecular beam epitaxial growth; Photovoltaic cells; Semiconductor materials; Solids; MOVPE; compound semiconductor; epitaxy; multijunction photovoltaic cells;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices, 2007 Spanish Conference on
  • Conference_Location
    Madrid
  • Print_ISBN
    1-4244-0868-7
  • Type

    conf

  • DOI
    10.1109/SCED.2007.383986
  • Filename
    4271157