Dose rate radiation induced linear CCD functional failure

Author

Zujun Wang ; Bengqi Tang ; Zhigang Xiao ; Minbo Liu ; Yong Zhang ; Shaoyan Huang

Author_Institution

Northwest Inst. of Nucl. Technol., Xi´an, China

fYear

2011

fDate

19-23 Sept. 2011

Firstpage

854

Lastpage

857

Abstract

The experiments of different dose rate radiation induced Charge Coupled Devices (CCD) functional failure are presented. The CCDs are divided into three groups with no shielding, shielding the output amplifiers, and shielding the photo sensing and the shift register areas with Pb during ⁶⁰Co γ tests. The radiation tolerance depend on the dose rates whether the linear CCDs are shielded or not. The total doses to functional failure of the CCDs at different dose rate radiation are compared. The criterion of functional failure induced by ionization radiation is ascertained. The mechanism of CCD functional failure is analyzed.

Keywords

charge-coupled devices; failure analysis; ionisation; radiation hardening (electronics); shielding; amplifier shielding; dose rate radiation induced charge coupled devices functional failure; dose rate radiation induced linear CCD functional failure; photo sensing shielding; radiation tolerance; shift register area shielding; Charge coupled devices; Ionization; Lead; Radiation effects; Sensors; Shift registers; Voltage measurement; Charge coupled devices; Dose rate; Functional failure; Total dose;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on

Conference_Location

Sevilla

ISSN

0379-6566

Print_ISBN

978-1-4577-0585-4

Type

conf

DOI

10.1109/RADECS.2011.6131316

Filename

6131316