Triple-junction GaInP/GaAs/Ge solar cells-production status, qualification results and operational benefits

Author

Granata, Jennifer E. ; Ermer, James H. ; Hebert, Peter ; Haddad, Moran ; King, Richard R. ; Krut, Dmitri D. ; Lovelady, James ; Gillanders, Mark S. ; Karam, Nasser H. ; Cavicchi, B. Terence

Author_Institution

Spectrolab Inc., Sylmar, CA, USA

fYear

2000

fDate

2000

Firstpage

1181

Lastpage

1184

Abstract

In 1999 Spectrolab completed design and qualification, and began production on the next generation of multijunction solar cells-a triple-junction GaInP/GaAs/Ge. With over 20% AM0 conversion efficiency at an operating temperature of 60°C, this cell provides 8-11% more power than competing dual-junction designs in GEO orbit after 15 years (6×10¹⁴ 1-MeV electron equivalence). Spectrolab is currently qualifying an improved triple-junction cell capable of delivering over 22% AM0 conversion efficiency under these same conditions, with a beginning-of-life operating efficiency of 27%

Keywords

III-V semiconductors; aerospace testing; elemental semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; p-n heterojunctions; semiconductor device measurement; semiconductor device testing; solar cells; space vehicle power plants; 1 MeV; 15 y; 27 percent; 60 C; AM0 conversion efficiency; GEO orbit; GaInP-GaAs-Ge; GaInP/GaAs/Ge triple junction solar cells; Spectrolab; beginning-of-life operating efficiency; space power; Epitaxial growth; Epitaxial layers; Gallium arsenide; Knee; Photovoltaic cells; Power system modeling; Production systems; Qualifications; System testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE

Conference_Location

Anchorage, AK

ISSN

0160-8371

Print_ISBN

0-7803-5772-8

Type

conf

DOI

10.1109/PVSC.2000.916099

Filename

916099