• DocumentCode
    3032250
  • Title

    The Radiation Tolerance Problem: Analytical Modelling of Inter-Dependency of Parameters

  • Author

    Kadim, H.J.

  • Author_Institution
    Sch. of Eng., LJMU, Liverpool, UK
  • fYear
    2009
  • fDate
    20-21 Aug. 2009
  • Firstpage
    127
  • Lastpage
    131
  • Abstract
    Radiation-induced damage presents a serious threat facing space applications. This threat has lead to an increasingly growing demand for radiation tolerant electronic devices. The radiation tolerance is likely to present an intractable problem to satisfy. One way of dealing with the radiation tolerance problem could be through analytical modelling of the many radiation-effects parameters, some of which are design dependent and others are process dependent. The paper presents analytical modelling expressions that allow for investigation of the coupling effect between a range of design and process related parameters. Examinations of the inter-dependency of these parameters would aid identifying possible solutions to the radiation tolerance problem.
  • Keywords
    MOSFET; radiation hardening (electronics); semiconductor device models; tolerance analysis; MOS transistors; radiation tolerance problem; radiation tolerant electronic devices; radiation-effect parameter modelling; radiation-induced damage; space radiation; Absorption; Analytical models; Hazards; Intelligent systems; Ionization; MOSFET circuits; Military satellites; Radiative recombination; Semiconductor materials; Spontaneous emission; DSM; Space; military; radiation; satellite; security; traps;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bio-inspired Learning and Intelligent Systems for Security, 2009. BLISS '09. Symposium on
  • Conference_Location
    Edinburgh
  • Print_ISBN
    978-0-7695-3754-2
  • Type

    conf

  • DOI
    10.1109/BLISS.2009.33
  • Filename
    5376810