Title :
AlGaAs/InGaAlP tunnel junctions for multi-junction solar cells
Author :
Sharps, P.R. ; Li, N.Y. ; Hills, J.S. ; Hou, H.Q. ; Chang, P.C. ; Baca, A.
Author_Institution :
EMCORE Photovoltaics, Albuquerque, NM, USA
Abstract :
A number of different high bandgap tunnel junctions have been examined for use in advanced monolithic multijunction solar cells. All of the tunnel junctions are grown by metal-organic vapor phase epitaxy. An Al0.9Ga0.1As-In0.5Ga0.3Al 0.2P tunnel junction has the necessary optical and electrical properties for use in an advanced four junction device, and the authors demonstrate a working device. The bandgap of the Al0.9Ga0.1As and the In0.5Ga0.3 Al0.2P are both 2.1 eV. The Jp of the device is 1,500 mA/cm2, and the series resistance is 2.5×10 -2 Ωcm2. The Al0.9Ga0.1As is doped with carbon, while the In 0.5Ga0.3Al0.2P is doped with tellurium. SIMS analysis indicates minimal tellurium memory effect and outdiffusion, and hence minimal tellurium doping in ensuing layers
Keywords :
MOCVD; aluminium compounds; gallium arsenide; indium compounds; p-n heterojunctions; secondary ion mass spectroscopy; semiconductor device measurement; semiconductor device testing; semiconductor growth; solar cells; vapour phase epitaxial growth; 2.1 eV; Al0.9Ga0.1As-In0.5Ga0.3 Al0.2P; AlGaAs/InGaAlP tunnel junctions; SIMS analysis; electrical properties; high bandgap tunnel junctions; metal-organic vapor phase epitaxial growth; multi-junction solar cells; optical and electrical properties; outdiffusion; series resistance; tellurium doping; tellurium memory effect; Absorption; Current density; Epitaxial growth; Laboratories; Optical buffering; Optical devices; Photonic band gap; Photovoltaic cells; Solar power generation; Tellurium;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.916100
