AlGaAs/InGaAlP tunnel junctions for multi-junction solar cells

Author

Sharps, P.R. ; Li, N.Y. ; Hills, J.S. ; Hou, H.Q. ; Chang, P.C. ; Baca, A.

Author_Institution

EMCORE Photovoltaics, Albuquerque, NM, USA

fYear

2000

fDate

2000

Firstpage

1185

Lastpage

1188

Abstract

A number of different high bandgap tunnel junctions have been examined for use in advanced monolithic multijunction solar cells. All of the tunnel junctions are grown by metal-organic vapor phase epitaxy. An Al_0.9Ga_0.1As-In_0.5Ga_0.3Al _0.2P tunnel junction has the necessary optical and electrical properties for use in an advanced four junction device, and the authors demonstrate a working device. The bandgap of the Al_0.9Ga_0.1As and the In_0.5Ga_0.3Al_0.2P are both 2.1 eV. The J_p of the device is 1,500 mA/cm², and the series resistance is 2.5×10 ^-2 Ωcm². The Al_0.9Ga_0.1As is doped with carbon, while the In _0.5Ga_0.3Al_0.2P is doped with tellurium. SIMS analysis indicates minimal tellurium memory effect and outdiffusion, and hence minimal tellurium doping in ensuing layers

Keywords

MOCVD; aluminium compounds; gallium arsenide; indium compounds; p-n heterojunctions; secondary ion mass spectroscopy; semiconductor device measurement; semiconductor device testing; semiconductor growth; solar cells; vapour phase epitaxial growth; 2.1 eV; Al_0.9Ga_0.1As-In_0.5Ga_0.3Al_0.2P; AlGaAs/InGaAlP tunnel junctions; SIMS analysis; electrical properties; high bandgap tunnel junctions; metal-organic vapor phase epitaxial growth; multi-junction solar cells; optical and electrical properties; outdiffusion; series resistance; tellurium doping; tellurium memory effect; Absorption; Current density; Epitaxial growth; Laboratories; Optical buffering; Optical devices; Photonic band gap; Photovoltaic cells; Solar power generation; Tellurium;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE

Conference_Location

Anchorage, AK

ISSN

0160-8371

Print_ISBN

0-7803-5772-8

Type

conf

DOI

10.1109/PVSC.2000.916100

Filename

916100